|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
FMA3009 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: * * * * * * * * Cascode Configuration 10dB Gain Single Supply 23dBm P1dB Output Power at 8.0V pHEMT Technology Bias Control Input Return Loss <-10dB Output Return Loss <-10dB Preliminary Datasheet v2.1 FUNCTIONAL SCHEMATIC: VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3009 is a high performance 2-20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation and electronic warfare applications. The die is fabricated using the Filtronic 0.25m process. The Circuit is DC blocked at both the RF input and the RF output. Bias control is achieved using a combination of three on chip bias resistors connected to ground, using the bond wires. TYPICAL APPLICATIONS: * * * Test Instrumentation Electronic Warfare Broadband Communication Infrastructure ELECTRICAL SPECIFICATIONS: PARAMETER Small Signal Gain Gain Ripple Input Return Loss Output Return Loss Reverse Isolation Output Power at 1dB compression point Power Roll-off Saturated Output Power CONDITIONS 2-20GHz 2-20GHz 2-20GHz 2-20GHz 2-20GHz 10GHz 20GHz 2-20GHz 10GHz 20GHz MIN 9.0 TYP 10 0.7 <-10 <-10 <-45 27 22 5 28 24 287 MAX UNITS dB dB dB dB dB dBm dB dBm Drain Current 8.0V mA Note: TAMBIENT = +25C, Z0 = 50 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3009 Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Gate Voltage Drain Voltage Total Power Dissipation Gain Compression Thermal Resistivity Operating Temp Storage Temp PAD LAYOUT: PAD REF A B B SYMBOL Pin VG1 VDD ABSOLUTE MAXIMUM +25dBm -2V +10V PAD NAME IN R1 R2 R3 Source DESCRIPTION PIN COORDINATES (m) (100,396) (1896,100) RF in Ptot tbd C D Source Resistors (2046, 100) (2196, 100) Comp JC Toper Tstor tbd 0.66C/W -40C to +85C -55C to +150C E Resistor bypass bond pad (2027, 337) F G H OUT VDD GND R5 R4 RF Output Drain Voltage Ground Cascode Resistor Cascode Resistor (2200, 650) (2156, 1000) (1738, 995) (245, 1000) (95, 1000) Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. I J Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening H J I F A E B C D G DIE SIZE (m) 2300 x 1100 DIE THICKNESS (m) 100 MIN. BOND PAD PITCH (m) 150 MIN. BOND PAD OPENING (m x m ) 100 x 100 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3009 Preliminary Datasheet v2.1 TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS: Note: Measurement Conditions ID= 240mA, VDD= 8V, TAMBIENT = 25C. All Bias resistors bonded to ground Gain 14 12 10 Gain (dB) 8 6 4 2 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 22 Input Return Loss 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 22 Output Return Loss 0 -5 Output Return Loss (dB) Reverse Isolation (dB) 0 -10 -20 -30 -40 -50 -60 -70 Reverse Isolation -10 -15 -20 -25 -30 -35 -40 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 22 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 22 Output Power at P1dB Compression Point vs Freq 30 Output Power (dBm) 25 20 15 10 5 10 Frequency (GHz) 15 20 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3009 Preliminary Datasheet v2.1 BIASING CIRCUIT SCHEMATIC: Optional off chip bias network 5 Turn Air Coil VDD 100pF 100nF On Chip Cascode Biasing Network RF Output RF Input ASSEMBLY DIAGRAM: It is recommended that the RF connections be made using two bond wires 25m in diameter and a maximum length of 300m. Optimum input and output return loss can be achieved, to compensate for bond wire length, with the addition of a microstrip transformer, shown in the diagram below. Ground connections should be made according to the required bias conditions. 100pF Capacitor To Evaluation Board via an 0402 Surface Mounted capacitor Substrate: Alumina Thickness: 635m Dimensions in mm 0.9 5 Turn Air Coil 0.9 0.61 0.61 1.0 1.0 Ground Connections Transformer Impedance 41 Electrical Length 32 at 10GHz BILL OF MATERIALS: COMPONENT All RF tracks should be 50 characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100pF, 0402 5 Turn Air Coil (Manufacturer: Sycopel) 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3009 Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. ORDERING INFORMATION: PART NUMBER FMA3009 (Gel-pak available on request) DESCRIPTION Die in Waffle-pack HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise data and large-signal models are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
Price & Availability of FMA3009 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |